[1]李博文,张国成,秦世贤,等.基于浮栅型薄膜晶体管的光控多值存储器[J].福建理工大学学报,2023,21(06):580-584.[doi:10.3969/j.issn.1672-4348.2023.06.011]
　LI Bowen,ZHANG Guocheng,QIN Shixian,et al.Optically-controlled multi-value memory based on floating-gate thin-film transistors[J].Journal of Fujian University of Technology;,2023,21(06):580-584.[doi:10.3969/j.issn.1672-4348.2023.06.011]
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基于浮栅型薄膜晶体管的光控多值存储器()
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《福建理工大学学报》[ISSN:2097-3853/CN:35-1351/Z]

卷:
第21卷
期数:
2023年06期
页码:
580-584
栏目:
出版日期:
2023-12-25

文章信息/Info

Title:
Optically-controlled multi-value memory based on floating-gate thin-film transistors
作者:
李博文; 张国成; 秦世贤; 邢俊杰; 李志达; 赖秉琳
福建理工大学微电子技术研究中心
Author(s):
LI Bowen;  ZHANG Guocheng;  QIN Shixian;  XING Junjie;  LI Zhida;  LAI Binglin
Research Center for Microelectronics Technology, Fujian University of Technology
关键词:
浮栅型存储器; 薄膜晶体管; 光调制; PN共混
Keywords:
floating gate memory; thin-film transistors; optical modulation; PN blend
分类号:
TN321.5
DOI:
10.3969/j.issn.1672-4348.2023.06.011
文献标志码:
A
摘要:
为了解决一般存储器存储密度低、数据保持能力弱及保密性差等问题,基于浮栅型薄膜晶体管制备了一种性能受光调制的信息存储器,该存储器的存储窗口大于60 V,在特定条件下可呈现“1”“中间态”“0”3 种电流水平,采用PN 共混的有源层提高了器件的开关比。该存储器在提高数据储存密度、光学信息加密存储方面具有较强的发展潜力,可为新一代智能电子设备的信息存储提供助力。
Abstract:
In order to solve the problems of low storage density, weak data retention ability and poor confidentiality of general memory, an information memory with optical modulation performance was prepared based on floating-gate thin-film transistors. The memory window is larger than 60 V, and the memory can exhibit three current levels: “1”, “intermediate state” and “0” under certain conditions. Moreover, the on-off ratio of the device is improved by using the PN blend active layer. The memory has strong development potential in improving data storage density and optical information encryption storage, and provides assistance for information storage of a new generation of intelligent electronic devices.

参考文献/References:

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相似文献/References:

[1]陈知新.有机-无机钙钛矿作为有源层的薄膜晶体管制备[J].福建理工大学学报,2019,17(04):377.[doi:10.3969/j.issn.1672-4348.2019.04.012]
　CHEN Zhixin,LIN Jinyang.Fabrication of thin film transistors with organic-inorganic perovskite as an active layer[J].Journal of Fujian University of Technology;,2019,17(06):377.[doi:10.3969/j.issn.1672-4348.2019.04.012]

更新日期/Last Update: 2023-12-25