[1]代思远,陈松,孙峰,等.显微组织对Si3N4陶瓷基板热导率的影响[J].福建工程学院学报,2023,21(03):293-300.[doi:10.3969/j.issn.1672-4348.2023.03.015]
　DAI Siyuan,CHEN Song,SUN Feng,et al.Effects of microstructure on thermal conductivity of Si3N4 ceramic substrate[J].Journal of FuJian University of Technology,2023,21(03):293-300.[doi:10.3969/j.issn.1672-4348.2023.03.015]
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显微组织对Si3N4陶瓷基板热导率的影响()
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《福建工程学院学报》[ISSN:2097-3853/CN:35-1351/Z]

卷:
第21卷
期数:
2023年03期
页码:
293-300
栏目:
出版日期:
2023-06-25

文章信息/Info

Title:
Effects of microstructure on thermal conductivity of Si3N4 ceramic substrate
作者:
代思远; 陈松; 孙峰; 王再义; 林燕; 张伟儒; 王卫国
福建工程学院晶界工程研究所
Author(s):
DAI Siyuan;  CHEN Song;  SUN Feng;  WANG Zaiyi;  LIN Yan;  ZHANG Weiru;  WANG Weiguo
Institute of Grain Boundary Engineering, Fujian University of Technology
关键词:
Si3N4陶瓷基板; 电子背散射衍射; 显微组织; 导热性能
Keywords:
Si3N4 ceramic substrates;  electron backscatter diffraction;  microstructure;  thermal conductivity
分类号:
TQ174.75
DOI:
10.3969/j.issn.1672-4348.2023.03.015
文献标志码:
A
摘要:
采用电子背散射衍射、晶界面分布五参数分析和激光闪射等方法研究了国外生产的3 种商用Si3N4 陶瓷基板的显微组织和热导率。结果表明,烧结助剂含量较低、平均晶粒尺寸较大且{h k -(h+k) 0}//ND 丝织构较强的基板,ND 为基板板面法向,其面内热导率较高;反之亦然。3 种Si3N4 陶瓷基板的晶界取向差分布虽总体符合随机分布,但在取向差转角为180°位置明显偏离随机分布,这部分晶界的旋转轴以〈1 1 -2 0〉和〈1 0 -1 0〉为主,分别为Σ3 和Σ2 晶界,其晶界面分布和晶界界面匹配在3种基板中存在明显差异,但是由于这类晶界占总晶界的比例在3 种基板中均不超过0.5%,尚不能对热导率产生明显影响。
Abstract:
The microstructure and thermal conductivity of three commercial Si3N4 ceramic substrates made abroad were investigated by using electron backscatter diffraction, five parameter analysis and laser flash method . Results show that the substrates with lower sintering aid content, larger average grain size and stronger {h k -(h+k) 0}∥ND fiber texture have higher in-plane thermal conductivity when ND is in the normal direction to the substrate surface, and vice versa. Although the misorientation distribution of the three Si3N4 ceramic substrates generally accords with the random distribution, it obviously deviates from the random distribution when the rotation angle is 180°. These grain boundaries are basically those having 〈1 1 -2 0〉 and 〈1 0 -1 0〉 rotation axis, corresponding to ∑3 and ∑2 boundaries respectively. The grain boundary distribution and grain boundary interface matching are significantly different in the three substrates, but their effects on the thermal conductivity are negligible because of their very low frequencies which are generally lower than 0.5% out of the entire grain boundaries.

参考文献/References:

［1］ 廖圣俊，周立娟，尹凯俐，等. 高导热氮化硅陶瓷基板研究现状［J］. 材料导报，2020，34（21）：21105-21114.［2］ HAGGERTY J S，LIGHTFOOT A. Opportunities for enhancing the thermal conductivities of SiC and Si3N4 ceramics through improved processing［M］∥Ceramic Engineering and Science Proceedings. Hoboken，NJ，USA：John Wiley & Sons，Inc.，2008：475-487.［3］ 张景贤，段于森，江东亮，等. 高导热Si3N4陶瓷基片材料的制备研究［J］. 真空电子技术，2016（5）：7-10.［4］ LEE H M，LEE E B，KIM D L，et al. Comparative study of oxide and non-oxide additives in high thermal conductive and high strength Si3N4 ceramics［J］. Ceramics International，2016，42（15）：17466-17471.［5］ 王为得，陈寰贝，李世帅，等. 以YbH2-MgO体系为烧结助剂制备高热导率高强度氮化硅陶瓷［J］. 无机材料学报，2021，36（9）：959-966.［6］ 赵明亮，陈松，孙峰，等. Si3N4陶瓷材料晶界特征分布研究［J］. 物理学报，2021，70（22）：254-265.［7］ BELADI H，GHADERI A，ROHRER G S. Five-parameter grain boundary characterisation of randomly textured AZ31 Mg alloy［J］. Philosophical Magazine，2020，100（4）：456-466.［8］ WANG WG，CAI C H，ROHRER G S，et al. Grain boundary inter-connections in polycrystalline aluminum with random orientation［J］. Materials Characterization，2018，144：411-423.［9］ HIROSAKI N, OGATA S, KOCER C, et al. Molecular dynamics calculation of the ideal thermal conductivity of single-crystal α-and β-Si3N4［J］. Physical Review B, 2002, 65(13): 134110.

更新日期/Last Update: 2023-06-25