[1]陈知新.有机-无机钙钛矿作为有源层的薄膜晶体管制备[J].福建工程学院学报,2019,17(04):377-381.[doi:10.3969/j.issn.1672-4348.2019.04.012]
　CHEN Zhixin,LIN Jinyang.Fabrication of thin film transistors with organic-inorganic perovskite as an active layer[J].Journal of FuJian University of Technology,2019,17(04):377-381.[doi:10.3969/j.issn.1672-4348.2019.04.012]
点击复制

有机-无机钙钛矿作为有源层的薄膜晶体管制备()
分享到：

《福建工程学院学报》[ISSN:2097-3853/CN:35-1351/Z]

卷:
第17卷
期数:
2019年04期
页码:
377-381
栏目:
出版日期:
2019-08-25

文章信息/Info

Title:
Fabrication of thin film transistors with organic-inorganic perovskite as an active layer
作者:
陈知新
福建工程学院信息科学与工程学院
Author(s):
CHEN Zhixin ; LIN Jinyang
Research Center for Microelectronics Technology, Fujian University of Technology
关键词:
有机无机钙钛矿; 薄膜晶体管; 两步旋涂法; 有源层
Keywords:
organic-inorganic hybrid perovskite;  TFT;  two-step spin-coating method;  active layer
分类号:
TN321.5
DOI:
10.3969/j.issn.1672-4348.2019.04.012
文献标志码:
A
摘要:
利用有机-无机杂化钙钛矿材料兼有机材料的易加工性和无机半导体优异的载流子迁移率的特点，采用有机-无机杂化MAPbI3材料制备薄膜晶体管的有源层。利用两步旋涂法，通过控制MAI溶液的浓度定量化控制成膜，制备薄膜晶体管有源层。由该层组成的有机-无机杂化MAPbI3钙钛矿型的薄膜晶体管具有明显的电场效应，场效应迁移率可达到0.97cm2/(v·s)，工艺简单、加工温度低，而且适用于柔性显示。
Abstract:
Organic-inorganic hybrid perovskite materials have the easy processability of organic materials and the excellent carrier mobility of inorganic semiconductors, so that the active layer of the thin-film transistor is prepared by using the organic-inorganic hybrid MAPbI3 materials. In the preparation of the thin film transistor as an active layer, by controlling the concentration of MAI solution, the two-step spin-coating method can better quantitatively control the film formation. The organic-inorganic hybrid MAPbI3 perovskite TFT composed of this layer have obvious electric field effect. Its field effect mobility can reach 0.97 cm2/(v·s). The process is simple, the processing temperature is low, and it is suitable for flexible display.

参考文献/References:

[1] 孙志鹏. 柔性工艺薄膜晶体管直流栅应力可靠性研究[D]. 苏州: 苏州大学，2017.[2] HAN C, YUAN X, TANG W, et al. A study on organic thin-film transistors using Hf-La oxides with different La contents as gate dielectrics[J]. IEEE Transactions on Electron Devices,2018,99:1-6. [3] RAJBHANDARI P, DHAKAL T, VISPUTE R, et al. High mobility crystalline silicon film growth below 600 ℃ from an Au-Si eutectic melt for TFTs[J]. Materials Letters, 2018, 219: 138-142. [4] 曹镛, 陶洪, 邹建华, 等. 金属氧化物薄膜晶体管及其在新型显示中的应用[J]. 华南理工大学学报(自然科学版), 2012, 40(10): 1-11. [5] 白利忠, 李方, 赵东林. 碳纳米管制备石墨烯片及其储锂性能研究[J]. 材料导报, 2016, 30(18): 34-37. [6] 李昕, 郭士西, 宋辉, 等. 石墨烯晶体管研究进展[J]. 西安交通大学学报, 2014, 48(10): 1-8, 48.[7] 肖娟, 张浩力. 新型有机-无机杂化钙钛矿发光材料的研究进展[J]. 物理化学学报, 2016, 32(8): 1894-1912[8] 吴刚, 张欣茜, 顾卓伟, 等. 有机-无机杂化钙钛矿太阳电池的研究进展[J]. 中国材料进展, 2015, 34(2): 136-143.[9] 徐尧, 曾宪伟, 张文君, 等. 反式p-i-n结构钙钛矿太阳能电池[J]. 中国科学:化学, 2016, 46(4): 342-356.[10] 王俊. 柔性异质结型钙钛矿太阳能电池制备及性能研究[D]. 成都: 电子科技大学, 2017.[11] TANG L, PENG Y, ZHOU Z, et al. High-performance organic-inorganic hybrid perovskite thin-film field-effect transistors[J]. Applied Physics A, 2018, 124(9): 1-7.[12] IM J, JANG I, PELLET N, et al. Growth of CH3NH3PbI3 cuboids with controlled size for high-efficiency perovskite solar cells[J]. Nature Nanotechnology, 2014, 9(11): 927-932. [13] MEI Y, ZHANG C, VARDENY Z, et al. Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature[J]. MRS Communications, 2015, 5(2):297-301.[14] ZHU L, ZHANG H, LU Q, et al. Synthesis of ultrathin two-dimensional organic-inorganic hybrid perovskite nanosheets for polymer field-effect transistors[J]. Journal of Materials Chemistry C, 2018,6(15): 3945-3955.

相似文献/References:

[1]李博文,张国成,秦世贤,等.基于浮栅型薄膜晶体管的光控多值存储器[J].福建工程学院学报,2023,21(06):580.[doi:10.3969/j.issn.1672-4348.2023.06.011]
　LI Bowen,ZHANG Guocheng,QIN Shixian,et al.Optically-controlled multi-value memory based on floating-gate thin-film transistors[J].Journal of FuJian University of Technology,2023,21(04):580.[doi:10.3969/j.issn.1672-4348.2023.06.011]

更新日期/Last Update: 2019-08-25