[1]范梓琛,许永超,石洋,等.纯水介质下抛光单晶蓝宝石晶圆的反应去除机理[J].福建理工大学学报,2024,22(06):554-559.[doi:10.3969/j.issn.2097-3853.2024.06.007]
　FAN Zichen,XU Yongchao,SHI Yang,et al.Reaction removal mechanism of polished single crystal sapphire wafers in pure water medium[J].Journal of Fujian University of Technology;,2024,22(06):554-559.[doi:10.3969/j.issn.2097-3853.2024.06.007]
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纯水介质下抛光单晶蓝宝石晶圆的反应去除机理
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《福建理工大学学报》[ISSN:2097-3853/CN:35-1351/Z]

卷:
第22卷
期数:
2024年06期
页码:
554-559
栏目:
出版日期:
2024-12-25

文章信息/Info

Title:
Reaction removal mechanism of polished single crystal sapphire wafers in pure water medium
作者:
范梓琛; 许永超; 石洋; 詹友基; 陈丙三
福建理工大学材料科学与工程学院
Author(s):
FAN Zichen;  XU Yongchao;  SHI Yang;  ZHAN Youji;  CHEN Bingsan
School of Material Science and Engineering, Fujian University of Technology
关键词:
蓝宝石衬底; 抛光; 反应分子动力学; 界面反应; 材料去除机理
Keywords:
sapphire wafers; polishing; reaction molecular dynamics; interfacial reaction; material removal mechanism
分类号:
TH161；TG58
DOI:
10.3969/j.issn.2097-3853.2024.06.007
文献标志码:
A
摘要:
采用反应分子动力学模拟的方法，研究了水溶液下SiO2抛光蓝宝石过程中材料原子级别的反应去除机理，并结合抛光实验对比验证。结果表明：在反应过程中H2O分子会吸附在蓝宝石表面，与蓝宝石的Al 原子成键，形成Al—H2O和Al—OH 化学键，从而实现蓝宝石基体表面的“软化”，之后在磨粒机械作用下，工件的Al原子以Si-O-Al链的形式被去除。加工后的蓝宝石晶圆通过XPS 检测，分析其表面成分，对磨屑进行TEM分析观察并计算原子能谱。结果表明：在加工蓝宝石的过程中，SiO2和水溶液发生化学反应，生成包含Si-O-Al键连的硅酸铝盐(Al2SiO5)和水合氧化铝(AlOOH)组成的软质反应层，最终通过磨料的机械作用去除。
Abstract:
The atomic-level reaction removal mechanism of SiO2 polishing sapphire in aqueous solution was studied by reactive molecular dynamics simulation, and verified by polishing experiments. Simulation results show that: in the reaction process, H2O molecules will be adsorbed on the sapphire surface, and bonded with the Al atoms of sapphire, forming Al—H2O and Al—OH chemical bonds, so as to achieve the “softening” of the surface of the sapphire substrate. Then, under the action of abrasive particles, the Al atoms of the workpiece are removed in the form of Si-O-Al chains. The surface composition of the processed sapphire wafers was analyzed by XPS, and the abrasive chips were observed by TEM analysis and the atomic energy spectrum was calculated. Experimental results show that there is a chemical reaction between SiO2 and aqueous solution during the processing of sapphire, resulting in the formation of a soft reactive layer consisting of aluminum silicate containing Si-O-Al bonding (Al2SiO5) and hydrated aluminum oxide (AlOOH), which is ultimately removed by the mechanical action of the abrasive.

参考文献/References:

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更新日期/Last Update: 2024-12-25