[1]彭程,詹友基,许永超,等.磨料反应特性及绿色络合剂对蓝宝石衬底抛光性能的影响[J].福建理工大学学报,2023,21(06):538-543.[doi:10.3969/j.issn.1672-4348.2023.06.005]
　PENG Cheng,ZHAN Youji,XU Yongchao,et al.Effects of abrasive reaction properties and green complexing[J].Journal of Fujian University of Technology;,2023,21(06):538-543.[doi:10.3969/j.issn.1672-4348.2023.06.005]
点击复制

磨料反应特性及绿色络合剂对蓝宝石衬底抛光性能的影响()
分享到：

《福建理工大学学报》[ISSN:2097-3853/CN:35-1351/Z]

卷:
第21卷
期数:
2023年06期
页码:
538-543
栏目:
出版日期:
2023-12-25

文章信息/Info

Title:
Effects of abrasive reaction properties and green complexing
作者:
彭程; 詹友基; 许永超; 郑天清
福建省智能加工技术及装备重点实验室
Author(s):
PENG Cheng;  ZHAN Youji;  XU Yongchao;  ZHENG Tianqing
Fujian Key Laboratory of Intelligent Processing Technology and Equipment
关键词:
蓝宝石衬底; 抛光; 活性磨料; 络合剂; 材料去除率
Keywords:
sapphire substrates; polishing; active abrasive; complexing agent; material removal rate
分类号:
TH161；TG58
DOI:
10.3969/j.issn.1672-4348.2023.06.005
文献标志码:
A
摘要:
针对当前传统游离磨料抛光蓝宝石衬底存在的磨粒轨迹不可控、抛光液污染环境等问题,文章基于半固结柔性抛光工具探究了磨料反应活性及不同绿色络合剂对抛光蓝宝石衬底性能的影响。通过水解沉淀法制备了高活性纳米二氧化硅磨料,分别以木糖醇、甘露醇和三异丙醇胺作为络合剂配制绿色环保型抛光液,基于半固结柔性抛光工具进行加工试验。结果表明,高活性二氧化硅磨料的材料去除率达到1 nm/ min,较商用二氧化硅提升了81.8%,表面粗糙度降低了10.5%。同时,相较于甘露醇、三异丙醇胺,当抛光液组分中的络合剂为木糖醇时,蓝宝石衬底表面粗糙度分别降低了33.7% 和24%,PV 值小于18 nm,材料去除率分别提升了24% 和5.1%。高活性二氧化硅磨料和木糖醇络合剂可提高蓝宝石衬底加工过程中的界面反应速率,从而提升了表面质量和加工效率,实现了蓝宝石衬底超光滑、高效率、无污染抛光。
Abstract:
Regarding the problems of uncontrollable abrasive trajectory and environmental pollution of the poli-shing slurry that exists in the traditional free abrasive polishing of sapphire substrates, this study explores the effects of abrasive chemical reactivity and different green complexing agents on the polishing performance for substrates based on semi-fixed flexible polishing tools. Highly active nano-silica abrasives were prepared by the hydrolytic precipitation method. Green environment-friendly polishing slurry was prepared by using xylitol, mannitol and triisopropanolamine as complexing agents respectively. Subsequently, on a semi-solidified flexible po-lishing tool, machining tests were conducted. Results show that the material removal rate (MRR) of the highly active silica abrasive reaches as high as 1 nm/min, which is 81.8% higher than that of commercial silica, and the surface roughness is reduced by 10.5%. Meanwhile, compared with mannitol and triisopropanolamine, when xylitol is used as the complexing agent in the polishing slurry, the surface roughness of the sapphire substrate is reduced by 33.7% and 24% respectively, the PV value is less than 18 nm, and the material removal rate was improved by 24% and 5.1% respectively. The interfacial reaction rate during polishing can be accelerated with the highly reactive silica abrasive and xylitol complexing agent, thereby improving the surface quality and processing efficiency, realizing ultra-smooth, high-efficiency and pollution-free polishing of sapphire substrates.

参考文献/References:

［1］ 侯子阳. M面蓝宝石化学机械抛光液组分优化的研究［D］. 天津：河北工业大学，2022.［2］ 王金普，白林山，储向峰. A向蓝宝石化学机械抛光研究［J］. 金刚石与磨料磨具工程，2016，36（3）：43-49.［3］ ZHAO G G，XU Y C，WANG Q T，et al. Polishing performance and removal mechanism of coreshell structured diamond/SiO2 abrasives on sapphire wafer［J］. Micromachines，2022，13（12）：2160.［4］ LUO Q F，WEN H L，LU J. Solgel polishing technology for extremely hard semiconductor substrates［J］. The International Journal of Advanced Manufacturing Technology，2022，120（3）：1415-1432.［5］ XU Y C，LIN C，WANG Q T，et al. A novel polishing process with rigidflexible composite structure plate for sapphire wafer polishing［J］. The International Journal of Advanced Manufacturing Technology，2022，122（2）：659-668.［6］ LUO Q F，LU J，XU X P. Study on the processing characteristics of SiC and sapphire substrates polished by semifixed and fixed abrasive tools［J］. Tribology International，2016，104：191-203.［7］ 林旺票. 基于固相反应的半固着磨具及其对蓝宝石抛光的探索研究［D］. 杭州：浙江工业大学，2015.［8］ XU Y C，LU J，XU X P. Study on planarization machining of sapphire wafer with softhard mixed abrasive through mechanical chemical polishing［J］. Applied Surface Science，2016，389：713-720.［9］ DENG H G，ZHONG M，XU W H. Investigation of green alkaline pH regulators on sapphire UVCMP［J］. Tribology International，2023，178：108047.［10］ WANG T X，LEI H. Novel polyelectrolyteAl2O3/SiO2 composite nanoabrasives for improved chemical mechanical polishing （CMP） of sapphire［J］. Journal of Materials Research，2019，34（6）：1073-1082.［11］ YAN W X，ZHANG Z F，GUO X H，et al. The effect of pH on sapphire chemical mechanical polishing［J］. ECS Journal of Solid State Science and Technology，2015，4（3）：108-111.

更新日期/Last Update: 2023-12-25