[1]张国成,林金阳.绝缘修饰层及其厚度对喷墨打印OTFT的影响[J].福建工程学院学报,2016,14(06):597-602.[doi:10.3969/j.issn.1672-4348.2016.06.017]
　Zhang Guocheng,Lin Jinyang.The impact of dielectric modification layer and its thickness on the performance of inkjet-printed OTFT[J].Journal of FuJian University of Technology,2016,14(06):597-602.[doi:10.3969/j.issn.1672-4348.2016.06.017]
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绝缘修饰层及其厚度对喷墨打印OTFT的影响()
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《福建工程学院学报》[ISSN:2097-3853/CN:35-1351/Z]

卷:
第14卷
期数:
2016年06期
页码:
597-602
栏目:
出版日期:
2016-12-25

文章信息/Info

Title:
The impact of dielectric modification layer and its thickness on the performance of inkjet-printed OTFT
作者:
张国成;  林金阳
福建工程学院 信息科学与工程学院
Author(s):
Zhang Guocheng;  Lin Jinyang
College of Information Science and Engineering, Fujian University of Technology
关键词:
有机薄膜晶体管;  原子层沉积;  喷墨打印;  表面修饰;  修饰层厚度
Keywords:
organic thin film transistor(OTFT);  atomic layer deposit (ALD);  inkjet printing;  surface modification;  modification layer thickness
分类号:
TN321.5
DOI:
10.3969/j.issn.1672-4348.2016.06.017
文献标志码:
A
摘要:
通过在底栅顶接触的喷墨打印有机薄膜晶体管的SiO2表面采用原子层沉积方式制备薄层的Al2O3修饰层，并与未修饰前进行比较，发现有源层在ALD-Al2O3修饰后的SiO2表面接触角大大变小，且喷墨打印的有源层线条变粗。而随着ALD-Al2O3修饰层厚度的增加，SiO2表面粗糙度变大。通过测试其电学性能，发现ALD- Al2O3修饰层厚度为1 nm时，OTFT的性能最好，与未修饰前相比，其迁移率提高了近8倍，而开关比提高约4个数量级。
Abstract:
The SiO2 surface of bottom-gate top-contact configuration inkjet-printed organic thin film transistor(OTFT) was modified by preparing Al2O3 modification layer with ALD depositing on the dielectric layer. The contact angle of the active layer post ALD- Al2O3 modification decreased, while the width of the profiles of the inkjet printing active layers increased. With the increase of the thickness of ALD- Al2O3, the roughness of the dielectric layers increased. When the thickness of ALD- Al2O3 was 1nm, the performance of OTFT reached the best, with the mobility increasing 8 times and the on/off current ratio increasing 4 orders of magnitude.

参考文献/References:

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更新日期/Last Update: 2016-12-25